Plasma-Enhanced Chemical Vapor Deposition (PECVD)
Identifieur interne : 001B73 ( Main/Exploration ); précédent : 001B72; suivant : 001B74Plasma-Enhanced Chemical Vapor Deposition (PECVD)
Auteurs : Stevenx R. Droes [États-Unis] ; Toivo T. Kodas [États-Unis] ; Mark J. Hampden-Smith [États-Unis]Source :
Abstract
Abstract: This chapter presents a short review of plasma-enhanced chemical vapor deposition (PECVD) of non-oxide ceramics. A brief discussion of glow discharge plasmas as used in PECVD is presented first. This discussion provides a practical understanding of the processes and characteristic chemistry involved in PECVD. Next, the deposition of specific ceramic films is discussed in terms of precursors, types of plasmas and film properties. Although PECVD has been used extensively in microelectronics, these applications are not reviewed here. The focus of this chapter is on non-oxide ceramics used mainly as hard coatings, with the discussion confined to nitrides and carbides. Although TiB2, MoB, TaB2 and other borides are used as hard ceramic coatings, their deposition via plasma-enhanced CVD has not been reported. This chapter concludes with a discussion of the advantages and limitations of PECVD-prepared coatings.
Url:
DOI: 10.1007/978-94-009-0071-4_23
Affiliations:
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